Vishay P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- RS Stock No.:
 - 710-3386
 - Mfr. Part No.:
 - SI7309DN-T1-E3
 - Brand:
 - Vishay
 
Subtotal (1 pack of 5 units)*
£5.05
(exc. VAT)
£6.05
(inc. VAT)
FREE delivery for orders over £50.00
- Final 8,725 unit(s), ready to ship
 
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 5 - 45 | £1.01 | £5.05 | 
| 50 - 245 | £0.706 | £3.53 | 
| 250 - 495 | £0.624 | £3.12 | 
| 500 - 1245 | £0.526 | £2.63 | 
| 1250 + | £0.476 | £2.38 | 
*price indicative
- RS Stock No.:
 - 710-3386
 - Mfr. Part No.:
 - SI7309DN-T1-E3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.9 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 115 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 3.2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 14.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.05mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -65 °C | |
| Height | 1.04mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 3.9 A  | ||
Maximum Drain Source Voltage 60 V  | ||
Package Type PowerPAK 1212-8  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 115 mΩ  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 1V  | ||
Maximum Power Dissipation 3.2 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Length 3.05mm  | ||
Maximum Operating Temperature +150 °C  | ||
Typical Gate Charge @ Vgs 14.5 nC @ 10 V  | ||
Number of Elements per Chip 1  | ||
Width 3.05mm  | ||
Transistor Material Si  | ||
Minimum Operating Temperature -65 °C  | ||
Height 1.04mm  | ||
- COO (Country of Origin):
 - CN
 
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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