Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
- RS Stock No.:
 - 710-3320
 - Mfr. Part No.:
 - Si4134DY-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 pack of 10 units)*
£5.83
(exc. VAT)
£7.00
(inc. VAT)
FREE delivery for orders over £50.00
- Final 4,080 unit(s), ready to ship
 
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 10 - 90 | £0.583 | £5.83 | 
| 100 - 240 | £0.548 | £5.48 | 
| 250 - 490 | £0.496 | £4.96 | 
| 500 - 990 | £0.468 | £4.68 | 
| 1000 + | £0.437 | £4.37 | 
*price indicative
- RS Stock No.:
 - 710-3320
 - Mfr. Part No.:
 - Si4134DY-T1-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9.9 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 14 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 15.4 nC @ 10 V, 7.3 nC @ 4.5 V | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 9.9 A  | ||
Maximum Drain Source Voltage 30 V  | ||
Package Type SOIC  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 14 mΩ  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 1.2V  | ||
Maximum Power Dissipation 2.5 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -20 V, +20 V  | ||
Number of Elements per Chip 1  | ||
Length 5mm  | ||
Maximum Operating Temperature +150 °C  | ||
Width 4mm  | ||
Typical Gate Charge @ Vgs 15.4 nC @ 10 V, 7.3 nC @ 4.5 V  | ||
Transistor Material Si  | ||
Minimum Operating Temperature -55 °C  | ||
Height 1.5mm  | ||
- COO (Country of Origin):
 - CN
 
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
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