onsemi N-Channel MOSFET, 500 mA, 25 V, 3-Pin SOT-23 FDV301N
- RS Stock No.:
- 121-2748
- Mfr. Part No.:
- FDV301N
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal (1 pack of 150 units)*
£7.80
(exc. VAT)
£9.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 150 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | £0.052 | £7.80 |
| 750 - 1350 | £0.034 | £5.10 |
| 1500 - 2100 | £0.027 | £4.05 |
| 2250 - 2850 | £0.024 | £3.60 |
| 3000 + | £0.024 | £3.60 |
*price indicative
- RS Stock No.:
- 121-2748
- Mfr. Part No.:
- FDV301N
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.06V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +8 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.49 nC @ 4.5 V | |
| Length | 2.92mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.3mm | |
| Height | 0.93mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.06V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.49 nC @ 4.5 V | ||
Length 2.92mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.3mm | ||
Height 0.93mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.