N-Channel MOSFET Transistor, 3.6 A, 800 V, 3-Pin TO-220AB Infineon BUZ80A
- RS Stock No.:
- 840-971
- Mfr. Part No.:
- BUZ80A
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 840-971
- Mfr. Part No.:
- BUZ80A
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.6 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 100 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10mm | |
| Width | 4.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.25mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.6 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 100 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10mm | ||
Width 4.4mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.25mm | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
