Littelfuse SP721ABTG, Hex-Element Bi-Directional TVS Diode Array, 8-Pin SOIC
- RS Stock No.:
- 171-3895
- Mfr. Part No.:
- SP721ABTG
- Brand:
- Littelfuse
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-3895
- Mfr. Part No.:
- SP721ABTG
- Brand:
- Littelfuse
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Littelfuse | |
| Direction Type | Bi-Directional | |
| Diode Configuration | Array | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Maximum Peak Pulse Current | ±2A | |
| ESD Protection | Yes | |
| Number of Elements per Chip | 6 | |
| Minimum Operating Temperature | -40 °C | |
| Dimensions | 5 x 4 x 1.5mm | |
| Maximum Operating Temperature | +105 °C | |
| Capacitance | 3pF | |
| Maximum Reverse Leakage Current | 20µA | |
| Test Current | 1A | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4mm | |
Select all | ||
|---|---|---|
Brand Littelfuse | ||
Direction Type Bi-Directional | ||
Diode Configuration Array | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Maximum Peak Pulse Current ±2A | ||
ESD Protection Yes | ||
Number of Elements per Chip 6 | ||
Minimum Operating Temperature -40 °C | ||
Dimensions 5 x 4 x 1.5mm | ||
Maximum Operating Temperature +105 °C | ||
Capacitance 3pF | ||
Maximum Reverse Leakage Current 20µA | ||
Test Current 1A | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4mm | ||
- COO (Country of Origin):
- CN
The SP721 is an array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP721 has 2 protection SCR/Diode device structures per input. There are a total of 6 available inputs that can be used to protect up to 6 external signal or bus lines. Overvoltage protection is from the IN (Pins 1 - 3 and Pins 5 - 7) to V+ or V-. The SCR structures are designed for fast triggering at a threshold of one +VBE diode threshold above V+ (Pin 8) or a -VBE diode threshold below V- (Pin 4). From an IN input, a clamp to V+ is activated if a transient pulse causes the input to be increased to a voltage level greater than one VBE above V+. A similar clamp to V- is activated if a negative pulse, one VBE less than V-, is applied to an IN input.