Vishay Switching Diode, 250mA 50V, 2-Pin SOD-80 BAV100-GS08
- RS Stock No.:
- 815-1235P
- Mfr. Part No.:
- BAV100-GS08
- Brand:
- Vishay
Bulk discount available
Subtotal 1250 units (supplied on a reel)*
£43.75
(exc. VAT)
£52.50
(inc. VAT)
FREE delivery for orders over £50.00
Being discontinued
- Final 12,000 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1250 - 2250 | £0.035 |
| 2500 - 6000 | £0.033 |
| 6250 - 12250 | £0.032 |
| 12500 + | £0.03 |
*price indicative
- RS Stock No.:
- 815-1235P
- Mfr. Part No.:
- BAV100-GS08
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Diode Configuration | Single | |
| Maximum Forward Current | 250mA | |
| Number of Elements per Chip | 1 | |
| Mounting Type | Surface Mount | |
| Maximum Reverse Voltage | 50V | |
| Package Type | SOD-80 | |
| Diode Technology | Silicon Junction | |
| Pin Count | 2 | |
| Maximum Forward Voltage Drop | 1V | |
| Maximum Diode Capacitance | 1.5pF | |
| Maximum Operating Temperature | +175 °C | |
| Length | 3.7mm | |
| Width | 1.6mm | |
| Height | 1.6mm | |
| Dimensions | 3.7 x 1.6 x 1.6mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Diode Configuration Single | ||
Maximum Forward Current 250mA | ||
Number of Elements per Chip 1 | ||
Mounting Type Surface Mount | ||
Maximum Reverse Voltage 50V | ||
Package Type SOD-80 | ||
Diode Technology Silicon Junction | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 1V | ||
Maximum Diode Capacitance 1.5pF | ||
Maximum Operating Temperature +175 °C | ||
Length 3.7mm | ||
Width 1.6mm | ||
Height 1.6mm | ||
Dimensions 3.7 x 1.6 x 1.6mm | ||
- BAV100, BAV101, BAV102, BAV103 Small Signal Switching Diodes, High Voltage
- Application Note- Design Guidelines for Schottky Rectifiers
- Diodes Group Body Marking
- Application Note- Fundamentals of Rectifiers
- Application Note- High Speed Data Line Protection
- Application Note- Physical Explanation
- Application Note- Power Factor Correction with Ultrafast Diodes
- Application Note- Rectifiers for Power Factor Correction
- Application Note- Superectifier Design Brings New Level of Reliability to Surface Mount Comp
- Application Note- Trim and Form Process Reccomendation
- COO (Country of Origin):
- CN
Glass Passivated Junction Fast Switching Plastic Rectifier
Features
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Typical Applications
High voltage rectification of G2 grid CRT and TV, snubber
circuit of camera flash.
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current, typical IR less than 0.2 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Typical Applications
High voltage rectification of G2 grid CRT and TV, snubber
circuit of camera flash.
Mechanical Data
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
The Vishay small signal switching diode has high voltage and it is made in a single configuration. Its peak-repetitive surge current is 1 A, while its maximum continuous forward current is 0.25 A.
Storage temperature range -65 to +175°C
Diodes and Rectifiers, Vishay Semiconductor