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Subtotal (1 unit)*
£4.49
(exc. VAT)
£5.39
(inc. VAT)
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Limited stock
- 12 left, ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £4.49 |
| 10 - 24 | £4.13 |
| 25 - 49 | £3.97 |
| 50 - 99 | £3.89 |
| 100 + | £3.62 |
*price indicative
- RS Stock No.:
- 273-5438
- Mfr. Part No.:
- S70KL1282GABHV020
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 128Mbit | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 35ns | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 128Mbit | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 35ns | ||
The Infineon DRAM is a high speed CMOS self refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM.
HYPERBUS™ interface
200 MHz maximum clock rate
Configurable burst characteristics
Data throughput up to 400 MBps
Bidirectional read write data strobe
Optional DDR centre aligned read strobe
200 MHz maximum clock rate
Configurable burst characteristics
Data throughput up to 400 MBps
Bidirectional read write data strobe
Optional DDR centre aligned read strobe