The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

TSOP I package configurable as 1M x 16 or 2M x 8 SRAM
Very high speed: 45 ns
Temperature ranges
Industrial: –40 °C to +85 °C
Wide voltage range: 2.20 V to 3.60 V
Ultra-low standby power
Typical standby current: 1.5 μA
Maximum standby current: 12 μA
Ultra-low active power
Typical active current: 7 mA at f = 1 MHz
Easy memory expansion with CE1, CE2, and OE Features
Automatic power-down when deselected
CMOS for optimum speed and power
Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages

SRAM (Static Random Access Memory)