Infineon SRAM, CY62148ELL-55SXI- 4Mbit

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Subtotal 10 units (supplied in a tube)*

£67.25

(exc. VAT)

£80.70

(inc. VAT)

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  • 440 unit(s) shipping from 17 November 2025
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Units
Per unit
10 - 18£6.725
20 - 98£6.545
100 - 498£6.37
500 +£6.22

*price indicative

Packaging Options:
RS Stock No.:
124-2941P
Mfr. Part No.:
CY62148ELL-55SXI
Brand:
Infineon
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Brand

Infineon

Memory Size

4Mbit

Organisation

512k x 8 bit

Number of Words

512k

Number of Bits per Word

8bit

Maximum Random Access Time

45ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

32

Dimensions

20.75 x 11.43 x 2.81mm

Height

2.81mm

Maximum Operating Supply Voltage

5.5 V

Length

20.75mm

Width

11.43mm

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

4.5 V

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
US

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor


The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages


SRAM (Static Random Access Memory)

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