Alliance Memory AS4C16M16SA-6BIN, SDRAM 256Mbit Surface Mount, 166MHz, 3 V to 3.6 V, 54-Pin TFBGA
- RS Stock No.:
- 230-8412P
- Mfr. Part No.:
- AS4C16M16SA-6BIN
- Brand:
- Alliance Memory
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Subtotal 10 units (supplied in a tray)*
£44.25
(exc. VAT)
£53.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 278 unit(s) shipping from 06 October 2025
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Units | Per unit |
---|---|
10 - 18 | £4.425 |
20 - 98 | £4.345 |
100 - 198 | £3.89 |
200 + | £3.805 |
*price indicative
- RS Stock No.:
- 230-8412P
- Mfr. Part No.:
- AS4C16M16SA-6BIN
- Brand:
- Alliance Memory
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Alliance Memory | |
Memory Size | 256Mbit | |
Organisation | 16M x 16 | |
SDRAM Class | DDR | |
Data Rate | 166MHz | |
Data Bus Width | 16bit | |
Address Bus Width | 13bit | |
Number of Bits per Word | 16bit | |
Maximum Random Access Time | 5ns | |
Number of Words | 16 M | |
Mounting Type | Surface Mount | |
Package Type | TFBGA | |
Pin Count | 54 | |
Dimensions | 8.0 x 8.0 x 1.2mm | |
Height | 1.2mm | |
Length | 8.0mm | |
Width | 8.0mm | |
Maximum Operating Supply Voltage | 3.6 V | |
Maximum Operating Temperature | +85 °C | |
Minimum Operating Temperature | -40 °C | |
Minimum Operating Supply Voltage | 3 V | |
Select all | ||
---|---|---|
Brand Alliance Memory | ||
Memory Size 256Mbit | ||
Organisation 16M x 16 | ||
SDRAM Class DDR | ||
Data Rate 166MHz | ||
Data Bus Width 16bit | ||
Address Bus Width 13bit | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 5ns | ||
Number of Words 16 M | ||
Mounting Type Surface Mount | ||
Package Type TFBGA | ||
Pin Count 54 | ||
Dimensions 8.0 x 8.0 x 1.2mm | ||
Height 1.2mm | ||
Length 8.0mm | ||
Width 8.0mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 3 V | ||
The Alliance Memory 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank