The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Attribute
Value
Mounting Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current
12A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Single
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
2.2V
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
59A
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