Infineon 4V 110mA, Dual Schottky Diode, 3-Pin SOT323-3 BAT1504WH6327XTSA1

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Subtotal 200 units (supplied on a reel)*

£71.60

(exc. VAT)

£86.00

(inc. VAT)

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200 - 480£0.358
500 - 980£0.336
1000 - 1980£0.312
2000 +£0.29

*price indicative

Packaging Options:
RS Stock No.:
261-3918P
Mfr. Part No.:
BAT1504WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Mounting Type

Surface Mount

Package Type

SOT323-3

Maximum Continuous Forward Current

110mA

Peak Reverse Repetitive Voltage

4V

Series

BAT15-04W

Diode Configuration

Series

Diode Type

Schottky

Pin Count

3

Number of Elements per Chip

2

The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

RoHS compliant and halogen-free
Low capacitance and inductance