Infineon 650V 10A, Diode, PG-TO263-2 IDK10G65C5XTMA2
- RS Stock No.:
- 258-0963
- Mfr. Part No.:
- IDK10G65C5XTMA2
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,072.00
(exc. VAT)
£1,286.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.072 | £1,072.00 |
*price indicative
- RS Stock No.:
- 258-0963
- Mfr. Part No.:
- IDK10G65C5XTMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mounting Type | Surface Mount | |
| Package Type | PG-TO263-2 | |
| Maximum Continuous Forward Current | 10A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Series | IDK04G65C5 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Mounting Type Surface Mount | ||
Package Type PG-TO263-2 | ||
Maximum Continuous Forward Current 10A | ||
Peak Reverse Repetitive Voltage 650V | ||
Series IDK04G65C5 | ||
The Infineon 5th generation thinQ! SiC Schottky diode is proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. The new thinQ!™ generation 5 has been designed to complement our 650V CoolMOS families this ensures meeting the most stringent application requirements in this voltage range.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
