onsemi 650V 10A, SiC Schottky Diode, 5-Pin 2P, PQFN 8X8 FFSM1065B
- RS Stock No.:
- 214-8798
- Mfr. Part No.:
- FFSM1065B
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.52
(exc. VAT)
£11.425
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,990 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.904 | £9.52 |
| 50 - 95 | £1.64 | £8.20 |
| 100 + | £1.422 | £7.11 |
*price indicative
- RS Stock No.:
- 214-8798
- Mfr. Part No.:
- FFSM1065B
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mounting Type | Surface Mount | |
| Package Type | 2P, PQFN 8X8 | |
| Maximum Continuous Forward Current | 10A | |
| Peak Reverse Repetitive Voltage | 650V | |
| Diode Configuration | Common Anode Pair + Common Cathode Pair | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 5 | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Mounting Type Surface Mount | ||
Package Type 2P, PQFN 8X8 | ||
Maximum Continuous Forward Current 10A | ||
Peak Reverse Repetitive Voltage 650V | ||
Diode Configuration Common Anode Pair + Common Cathode Pair | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 5 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
Faster operating frequency
Increased power density
Reduced EMI