STMicroelectronics 1200V 5A, Diode, 2-Pin DPAK STPSC2H12B-TR1
- RS Stock No.:
- 189-4494
- Mfr. Part No.:
- STPSC2H12B-TR1
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 189-4494
- Mfr. Part No.:
- STPSC2H12B-TR1
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Mounting Type | Surface Mount | |
| Package Type | DPAK | |
| Maximum Continuous Forward Current | 5A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Drop | 2.25V | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Mounting Type Surface Mount | ||
Package Type DPAK | ||
Maximum Continuous Forward Current 5A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Drop 2.25V | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
