onsemi 1200V 50A, SiC Schottky Diode, 3-Pin TO-247 FFSH40120ADN-F085
- RS Stock No.:
- 178-4647P
- Mfr. Part No.:
- FFSH40120ADN-F085
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£94.50
(exc. VAT)
£113.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 166 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 + | £9.45 |
*price indicative
- RS Stock No.:
- 178-4647P
- Mfr. Part No.:
- FFSH40120ADN-F085
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Mounting Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current | 50A | |
| Peak Reverse Repetitive Voltage | 1200V | |
| Diode Configuration | Dual Common Cathode | |
| Rectifier Type | Schottky Diode | |
| Diode Type | SiC Schottky | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Diode Technology | SiC Schottky | |
| Peak Non-Repetitive Forward Surge Current | 1.19kA | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Mounting Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current 50A | ||
Peak Reverse Repetitive Voltage 1200V | ||
Diode Configuration Dual Common Cathode | ||
Rectifier Type Schottky Diode | ||
Diode Type SiC Schottky | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Diode Technology SiC Schottky | ||
Peak Non-Repetitive Forward Surge Current 1.19kA | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 1200V, D1, TO-247-3L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers