onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A

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Subtotal (1 reel of 2500 units)*

£2,590.00

(exc. VAT)

£3,107.50

(inc. VAT)

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Last RS stock
  • Final 2,500 unit(s), ready to ship
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Per Reel*
2500 +£1.036£2,590.00

*price indicative

RS Stock No.:
178-4263
Mfr. Part No.:
FFSD1065A
Brand:
onsemi
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Brand

onsemi

Mounting Type

Surface Mount

Package Type

TO-252

Maximum Continuous Forward Current

18A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

3

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

760A

COO (Country of Origin):
CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding