Semikron SK 20 MLI 066, SEMITOP3 , N-Channel Series IGBT Module, 30 A max, 600 V, Through Hole
- RS Stock No.:
- 905-6061
- Mfr. Part No.:
- SK 20 MLI 066
- Brand:
- Semikron
Discontinued
- RS Stock No.:
- 905-6061
- Mfr. Part No.:
- SK 20 MLI 066
- Brand:
- Semikron
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Series | |
| Package Type | SEMITOP3 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 36 | |
| Transistor Configuration | Series | |
| Dimensions | 55 x 31 x 15.43mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Select all | ||
|---|---|---|
Brand Semikron | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Series | ||
Package Type SEMITOP3 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 36 | ||
Transistor Configuration Series | ||
Dimensions 55 x 31 x 15.43mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- IT
Quad IGBT Modules
The series configuration of these Semikron Quad IGBT modules makes them the perfect solution for applications which require a high performance 3-level topology. These compact PCB mounting SEMITOP 3 modules feature single hole fixing with excellent heat transfer and utilise Trench IGBT technology. Typical applications include 3-level DC-AC Inverters and UPS power supplies.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.