Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount
- RS Stock No.:
- 747-1055
- Mfr. Part No.:
- 6MBi50VA-120-50
- Brand:
- Fuji
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RS will no longer stock this product.
- RS Stock No.:
- 747-1055
- Mfr. Part No.:
- 6MBi50VA-120-50
- Brand:
- Fuji
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fuji | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 280 W | |
| Package Type | M636 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 28 | |
| Dimensions | 107.5 x 45 x 17mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Fuji | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 280 W | ||
Package Type M636 | ||
Configuration 3 Phase Bridge | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 28 | ||
Dimensions 107.5 x 45 x 17mm | ||
Maximum Operating Temperature +150 °C | ||
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Note
Maximum collector current (Ic) values are stated per transistor within the module.
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.