Infineon BTS51202EKAXUMA1, DualHigh Side, High Side Power Switch IC
- RS Stock No.:
- 258-7051
- Mfr. Part No.:
- BTS51202EKAXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,477.50
(exc. VAT)
£1,772.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
2500 + | £0.591 | £1,477.50 |
*price indicative
- RS Stock No.:
- 258-7051
- Mfr. Part No.:
- BTS51202EKAXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Power Switch Topology | High Side | |
Power Switch Type | High Side | |
Number of Channels | 2 | |
Maximum Operating Supply Voltage | 28 V | |
Number of Outputs | 6 | |
Maximum Operating Current | 2.5A | |
Select all | ||
---|---|---|
Brand Infineon | ||
Power Switch Topology High Side | ||
Power Switch Type High Side | ||
Number of Channels 2 | ||
Maximum Operating Supply Voltage 28 V | ||
Number of Outputs 6 | ||
Maximum Operating Current 2.5A | ||
PROFET Smart High-Side Power Switch, Multi-Channel, Infineon
Overload protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
Electrostatic discharge (ESD) protection
Current limitation
Short-circuit protection
Thermal shutdown
Overvoltage protection
Electrostatic discharge (ESD) protection
The Infineon smart high side power switch is embedded in a PG-DSO-14-40 EP exposed pad package, providing protective functions and diagnosis. The power transistor is built by an N channel vertical power MOSFET with charge pump. The device is integrated in Smart 6 technology. It is specially designed to drive lamps as well as LEDs in the harsh automotive environment.
Two channel device
Very low stand by current
Electrostatic discharge protection
Optimized electromagnetic compatibility
Very low power DMOS leakage current in OFF state
Very low stand by current
Electrostatic discharge protection
Optimized electromagnetic compatibility
Very low power DMOS leakage current in OFF state
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