Infineon High Side 1, High Side Power Switch IC 8-Pin, TDSO
- RS Stock No.:
- 223-8479
- Mfr. Part No.:
- BTS52001ENAXUMA1
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£1,206.00
(exc. VAT)
£1,446.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.402 | £1,206.00 |
*price indicative
- RS Stock No.:
- 223-8479
- Mfr. Part No.:
- BTS52001ENAXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 200mΩ | |
| Number of Inputs | 1 | |
| Mount Type | Surface | |
| Package Type | TDSO | |
| Minimum Supply Voltage | -0.3V | |
| Maximum Supply Voltage | 28V | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Operating Current | 1.5A | |
| Length | 4.9mm | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC | |
| Series | PROFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 200mΩ | ||
Number of Inputs 1 | ||
Mount Type Surface | ||
Package Type TDSO | ||
Minimum Supply Voltage -0.3V | ||
Maximum Supply Voltage 28V | ||
Pin Count 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Operating Current 1.5A | ||
Length 4.9mm | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC | ||
Series PROFET | ||
The Infineon BTS5200 series is a 200mΩ single channel smart high-side power switch, embedded in a PG-TDSO-8-31, providing protective functions and diagnosis. The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in smart6 technology.
Electrostatic discharge protection
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product
AEC qualified
