onsemi NXH80B120H2Q0SG, Power Module Power Switch IC 22-Pin, Q0BOOST
- RS Stock No.:
- 172-3298
- Mfr. Part No.:
- NXH80B120H2Q0SG
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 172-3298
- Mfr. Part No.:
- NXH80B120H2Q0SG
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Power Switch Type | Power Module | |
| Number of Outputs | 1 | |
| Power Rating | 103mW | |
| Mounting Type | Screw Mount | |
| Package Type | Q0BOOST | |
| Pin Count | 22 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Dimensions | 66.2 x 32.8 x 16.05mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Power Switch Type Power Module | ||
Number of Outputs 1 | ||
Power Rating 103mW | ||
Mounting Type Screw Mount | ||
Package Type Q0BOOST | ||
Pin Count 22 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
Dimensions 66.2 x 32.8 x 16.05mm | ||
The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.4 V
SiC Diode for high speed switching
Solderable Pins
Easy mounting
Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
Thermistor
Applications
Solar Inverter Boost Stage
Solar Inverter
UPS
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.4 V
SiC Diode for high speed switching
Solderable Pins
Easy mounting
Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
Thermistor
Applications
Solar Inverter Boost Stage
Solar Inverter
UPS