Toshiba, TLP291-4(E(T DC Input Phototransistor Output Quad Optocoupler, Surface Mount, 16-Pin SOIC
- RS Stock No.:
- 885-0976
- Mfr. Part No.:
- TLP291-4(E(T
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
£5.94
(exc. VAT)
£7.13
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 420 left, ready to ship
- Plus 530 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £0.594 | £5.94 |
50 - 190 | £0.505 | £5.05 |
200 - 490 | £0.446 | £4.46 |
500 + | £0.386 | £3.86 |
*price indicative
- RS Stock No.:
- 885-0976
- Mfr. Part No.:
- TLP291-4(E(T
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Mounting Type | Surface Mount | |
Output Device | Phototransistor | |
Maximum Forward Voltage | 1.4V | |
Number of Channels | 4 | |
Number of Pins | 16 | |
Package Type | SOIC | |
Input Current Type | DC | |
Typical Rise Time | 2µs | |
Maximum Input Current | 50 mA | |
Isolation Voltage | 2.5 kVrms | |
Maximum Current Transfer Ratio | 400% | |
Typical Fall Time | 3µs | |
Series | TLP 291-4 | |
Special Features | Suitable for High-Density Surface Mount Applications Such as Programmable Controllers, TLP291-4 Consists of Photo Transistors Optically Coupled to Gallium Arsenide Infrared Emitting Diodes | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Mounting Type Surface Mount | ||
Output Device Phototransistor | ||
Maximum Forward Voltage 1.4V | ||
Number of Channels 4 | ||
Number of Pins 16 | ||
Package Type SOIC | ||
Input Current Type DC | ||
Typical Rise Time 2µs | ||
Maximum Input Current 50 mA | ||
Isolation Voltage 2.5 kVrms | ||
Maximum Current Transfer Ratio 400% | ||
Typical Fall Time 3µs | ||
Series TLP 291-4 | ||
Special Features Suitable for High-Density Surface Mount Applications Such as Programmable Controllers, TLP291-4 Consists of Photo Transistors Optically Coupled to Gallium Arsenide Infrared Emitting Diodes | ||
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