These devices are single optocouplers. Each channel is composed of a Gallium Arsenide infra-red emitting diode and a silicon photo transistor. Package styles for these devices are 4pin with surface mount, butt cut and gull wing options available. The same electrical die, assembly processes and materials are used for each channel of each device shown above Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted.

Performance guaranteed over -55°C to +125°C temperature range
High current transfer ratio
5000V electrical isolation