The Renesas M3xxx316 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 32Mbit. MRAM technology is analogous to flash technology with SRAM compatible 35ns/35ns and 45ns/45ns read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile. This makes MRAM a very reliable and fast non-volatile memory solution. MRAM is a true random-access memory

Ideal for applications that must store and retrieve data without incurring large latency penalties Interface is Parallel Asynchronous x16 Technology used is 40nm pMTJ STT-MRAM Operating voltage range is 2.70V to 3.60V Package type is 48-ball FBGA (10mm x 10mm) RoHS compliant & REACH Compliant