onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP
- RS Stock No.:
- 792-5161P
- Mfr. Part No.:
- 2SK3666-3-TB-E
- Brand:
- ON Semiconductor
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£69.50
(exc. VAT)
£83.50
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 250 - 450 | £0.278 |
| 500 - 1200 | £0.261 |
| 1250 - 2450 | £0.24 |
| 2500 + | £0.221 |
*price indicative
- RS Stock No.:
- 792-5161P
- Mfr. Part No.:
- 2SK3666-3-TB-E
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Idss Drain-Source Cut-off Current | 1.2 to 3mA | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Drain Gate Voltage | -30V | |
| Configuration | Single | |
| Transistor Configuration | Single | |
| Maximum Drain Source Resistance | 200 Ω | |
| Mounting Type | Surface Mount | |
| Package Type | CP | |
| Pin Count | 3 | |
| Drain Gate On-Capacitance | 4pF | |
| Source Gate On-Capacitance | 1.1pF | |
| Dimensions | 2.9 x 1.5 x 1.1mm | |
| Height | 1.1mm | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.5mm | |
Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Idss Drain-Source Cut-off Current 1.2 to 3mA | ||
Maximum Drain Source Voltage 30 V | ||
Maximum Drain Gate Voltage -30V | ||
Configuration Single | ||
Transistor Configuration Single | ||
Maximum Drain Source Resistance 200 Ω | ||
Mounting Type Surface Mount | ||
Package Type CP | ||
Pin Count 3 | ||
Drain Gate On-Capacitance 4pF | ||
Source Gate On-Capacitance 1.1pF | ||
Dimensions 2.9 x 1.5 x 1.1mm | ||
Height 1.1mm | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.5mm | ||
- COO (Country of Origin):
- CN
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.