A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Attribute
Value
Channel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Height
1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Width
1.4mm
Be the first to know about our latest products and services
Join our mailing list today:
The personal information you provide to us when signing up to the mailing list will be processed in line with our privacy policy.
