A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Attribute
Value
Channel Type
N
Idss Drain-Source Cut-off Current
5 → 30mA
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
-40V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Through Hole
Package Type
TO-206AA
Pin Count
3
Dimensions
5.84 x 5.84 x 5.33mm
Minimum Operating Temperature
-55 °C
Height
5.33mm
Maximum Operating Temperature
+200 °C
Length
5.84mm
Width
5.84mm
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