Infineon SGD02N120 IGBT, 6.2 A 1200 V, 3-Pin TO-252, Surface Mount
- RS Stock No.:
- 911-4782
- Mfr. Part No.:
- SGD02N120
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 911-4782
- Mfr. Part No.:
- SGD02N120
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 6.2 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 62 W | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.5 x 6.22 x 2.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 6.2 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 62 W | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.5 x 6.22 x 2.3mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- DE
Infineon Discrete IGBT Transistors
Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.