Infineon IHW30N160R2FKSA1 IGBT, 60 A 1600 V, 3-Pin TO-247

  • RS Stock No. 911-4779
  • Mfr. Part No. IHW30N160R2FKSA1
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 1600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 312 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
1230 In stock - FREE next working day delivery available
Price Each (In a Tube of 30)
£ 3.754
(exc. VAT)
£ 4.505
(inc. VAT)
Units
Per unit
Per Tube*
30 - 30
£3.754
£112.62
60 - 120
£3.604
£108.12
150 +
£3.491
£104.73
*price indicative
Related Products
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 1100 to 1600V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...