Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 906-2892P
- Mfr. Part No.:
- IKW25N120H3FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 6 units (supplied in a tube)*
£22.71
(exc. VAT)
£27.252
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 220 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
6 - 18 | £3.785 |
20 - 38 | £3.595 |
40 - 98 | £3.435 |
100 + | £2.95 |
*price indicative
- RS Stock No.:
- 906-2892P
- Mfr. Part No.:
- IKW25N120H3FKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 50 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 326 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 16.13 x 5.21 x 21.1mm | |
Energy Rating | 4.3mJ | |
Maximum Operating Temperature | +175 °C | |
Gate Capacitance | 1430pF | |
Minimum Operating Temperature | -40 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 326 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Energy Rating 4.3mJ | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 1430pF | ||
Minimum Operating Temperature -40 °C | ||