STMicroelectronics STGWA30M65DF2 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole

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£5.34

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£6.40

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2 - 8£2.67£5.34
10 - 98£2.265£4.53
100 - 498£1.82£3.64
500 +£1.615£3.23

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Packaging Options:
RS Stock No.:
906-2824
Mfr. Part No.:
STGWA30M65DF2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

258 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 21.1mm

Energy Rating

2.03mJ

Maximum Operating Temperature

+175 °C

Gate Capacitance

2490pF

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.