STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- RS Stock No.:
- 906-2798P
- Mfr. Part No.:
- STGD5H60DF
- Brand:
- STMicroelectronics
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Subtotal 50 units (supplied on a continuous strip)*
£34.90
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£41.90
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- Shipping from 20 February 2026
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Units | Per unit |
|---|---|
| 50 - 90 | £0.698 |
| 100 - 240 | £0.628 |
| 250 - 490 | £0.566 |
| 500 + | £0.538 |
*price indicative
- RS Stock No.:
- 906-2798P
- Mfr. Part No.:
- STGD5H60DF
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 10 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 83 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 6.2 x 2.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Gate Capacitance | 855pF | |
| Minimum Operating Temperature | -55 °C | |
| Energy Rating | 221mJ | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 10 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 83 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 6.2 x 2.4mm | ||
Maximum Operating Temperature +175 °C | ||
Gate Capacitance 855pF | ||
Minimum Operating Temperature -55 °C | ||
Energy Rating 221mJ | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.