Infineon IKW20N60H3FKSA1 Single IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 892-2197P
- Mfr. Part No.:
- IKW20N60H3FKSA1
- Brand:
- Infineon
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Subtotal 40 units (supplied in a tube)*
£71.92
(exc. VAT)
£86.32
(inc. VAT)
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In Stock
- 212 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 40 - 76 | £1.798 |
| 80 - 196 | £1.713 |
| 200 - 596 | £1.56 |
| 600 + | £1.363 |
*price indicative
- RS Stock No.:
- 892-2197P
- Mfr. Part No.:
- IKW20N60H3FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 170 W | |
| Package Type | TO-247 | |
| Configuration | Single | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 100kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 1100pF | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Energy Rating | 1.07mJ | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 170 W | ||
Package Type TO-247 | ||
Configuration Single | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 100kHz | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 1100pF | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Energy Rating 1.07mJ | ||
Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1
This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.
Features & Benefits
• Utilises TRENCHSTOP technology, delivering low VCEsat
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation
• Achieves maximum junction temperature of 175°C for robust performance
• Features a soft, fast recovery anti-parallel diode enhancing reliability
• Ensures a switching speed of 100kHz for efficient operation
Applications
• Utilised in uninterruptible power supplies for reliable operation
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements
• Effective in welding converters for high-performance welding
• Suitable for converters with high switching frequency requirements
What are the thermal resistance characteristics of this module?
The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.
How does the IGBT handle short circuits and power dissipation?
It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.
What is the significance of gate capacitance in this IGBT?
The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.