Toshiba GT50NR21,Q(O IGBT, 50 A 1050 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 891-2752
- Mfr. Part No.:
- GT50NR21,Q(O
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
£3.52
(exc. VAT)
£4.22
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 4 | £3.52 |
| 5 - 24 | £2.03 |
| 25 - 49 | £1.98 |
| 50 - 99 | £1.94 |
| 100 + | £1.91 |
*price indicative
- RS Stock No.:
- 891-2752
- Mfr. Part No.:
- GT50NR21,Q(O
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1050 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 0.45µs | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Gate Capacitance | 1500pF | |
| Maximum Operating Temperature | 175 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1050 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 0.45µs | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Gate Capacitance 1500pF | ||
Maximum Operating Temperature 175 °C | ||
- COO (Country of Origin):
- JP