STMicroelectronics STGF10NB60SD IGBT, 23 A 600 V, 3-Pin TO-220FP, Through Hole
- RS Stock No.:
- 877-2873P
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
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Subtotal 50 units (supplied in a tube)*
£52.20
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£62.65
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In Stock
- 50 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 50 - 90 | £1.044 |
| 100 - 240 | £1.017 |
| 250 - 490 | £0.991 |
| 500 + | £0.966 |
*price indicative
- RS Stock No.:
- 877-2873P
- Mfr. Part No.:
- STGF10NB60SD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 23 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 25 W | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 4.6 x 20mm | |
| Energy Rating | 8mJ | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Gate Capacitance | 610pF | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 23 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 25 W | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 4.6 x 20mm | ||
Energy Rating 8mJ | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Gate Capacitance 610pF | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.