onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 864-8855P
- Mfr. Part No.:
- FGH40T120SMD
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£61.60
(exc. VAT)
£73.90
(inc. VAT)
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Temporarily out of stock
- 9 unit(s) ready to ship
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Units | Per unit |
---|---|
10 - 99 | £6.16 |
100 - 249 | £5.09 |
250 - 499 | £4.81 |
500 + | £4.50 |
*price indicative
- RS Stock No.:
- 864-8855P
- Mfr. Part No.:
- FGH40T120SMD
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Continuous Collector Current | 80 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±25V | |
Maximum Power Dissipation | 555 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 15.87 x 4.82 x 20.82mm | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 555 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.87 x 4.82 x 20.82mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.