onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.25
(exc. VAT)
£8.70
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 24 left, ready to ship
- Plus 8 left, shipping from 22 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.625 | £7.25 |
| 20 + | £3.125 | £6.25 |
*price indicative
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 349 W | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.2 x 5 x 20.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 349 W | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.2 x 5 x 20.1mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.