onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 807-6660P
- Mfr. Part No.:
- HGT1S10N120BNST
- Brand:
- onsemi
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Subtotal 20 units (supplied on a continuous strip)*
£74.90
(exc. VAT)
£89.88
(inc. VAT)
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In Stock
- 622 unit(s) ready to ship
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| Units | Per unit | 
|---|---|
| 20 - 198 | £3.745 | 
| 200 + | £3.245 | 
*price indicative
- RS Stock No.:
- 807-6660P
- Mfr. Part No.:
- HGT1S10N120BNST
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
| Select all | Attribute | Value | 
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 298 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 11.33 x 4.83mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
| Brand onsemi | ||
| Maximum Continuous Collector Current 80 A | ||
| Maximum Collector Emitter Voltage 1200 V | ||
| Maximum Gate Emitter Voltage ±20V | ||
| Maximum Power Dissipation 298 W | ||
| Package Type D2PAK (TO-263) | ||
| Mounting Type Surface Mount | ||
| Channel Type N | ||
| Pin Count 3 | ||
| Switching Speed 1MHz | ||
| Transistor Configuration Single | ||
| Dimensions 10.67 x 11.33 x 4.83mm | ||
| Maximum Operating Temperature +150 °C | ||
| Minimum Operating Temperature -55 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
