Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
£5.31
(exc. VAT)
£6.37
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 14 unit(s) ready to ship
- Plus 46 unit(s) ready to ship from another location
- Plus 15 unit(s) shipping from 22 October 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £5.31 |
| 10 - 49 | £3.37 |
| 50 - 124 | £3.29 |
| 125 - 249 | £3.25 |
| 250 + | £3.18 |
*price indicative
- RS Stock No.:
- 796-5064
- Mfr. Part No.:
- GT50JR22
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±25V | |
| Maximum Power Dissipation | 230 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.5 x 4.5 x 20mm | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Maximum Power Dissipation 230 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.5 x 4.5 x 20mm | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.