- RS Stock No.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Brand:
- STMicroelectronics
Available to back order for despatch 18/12/2024
Added
Price Each (In a Pack of 2)
£3.94
(exc. VAT)
£4.73
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 8 | £3.94 | £7.88 |
10 - 24 | £3.365 | £6.73 |
26 - 98 | £3.175 | £6.35 |
100 - 498 | £2.725 | £5.45 |
500 + | £2.425 | £4.85 |
*price indicative |
- RS Stock No.:
- 795-9136
- Mfr. Part No.:
- STGW30NC120HD
- Brand:
- STMicroelectronics
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 220 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
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