Infineon IKW75N60TFKSA1 Single IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 754-5402P
- Mfr. Part No.:
- IKW75N60TFKSA1
- Brand:
- Infineon
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In Stock
- 74 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 - 9 | £6.40 |
| 10 - 14 | £6.19 |
| 15 - 19 | £6.00 |
| 20 + | £5.89 |
*price indicative
- RS Stock No.:
- 754-5402P
- Mfr. Part No.:
- IKW75N60TFKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 428 W | |
| Configuration | Single | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.03 x 21.1 x 5.16mm | |
| Gate Capacitance | 4620pF | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 428 W | ||
Configuration Single | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Transistor Configuration Single | ||
Dimensions 16.03 x 21.1 x 5.16mm | ||
Gate Capacitance 4620pF | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Infineon IGBT, 80A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW75N60TFKSA1
This IGBT is a high-performance semiconductor component designed for power electronics applications. With a maximum continuous collector current of 80A, it operates efficiently in high-voltage environments, rated for 600V. The device is packaged in a TO-247 format, ideal for through-hole mounting.
Features & Benefits
• Low collector-emitter saturation voltage enhances efficiency
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C
• High switching speed reduces energy loss during operation
• Positive temperature coefficient ensures stable performance
• Compatible with a wide temperature range from -40°C to +175°C
Applications
• Suitable for use in frequency converters in industrial settings
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency
• Ideal for uninterruptible power supply systems
• Utilised in motor control for automation
• Effective for renewable energy systems to ensure efficiency
What are the implications of short circuit withstand time for my application?
The short circuit withstand time of 5μs allows for reliable protection in applications that may encounter fault conditions, ensuring that the device can endure brief overcurrent situations without immediate failure.
How does the high switching speed impact system efficiency?
A high switching speed of 20kHz minimises energy losses during transitions, significantly improving overall system efficiency and performance, particularly in fast-response applications.
What are the thermal management considerations for optimal performance?
Thermal resistance values indicate effective heat dissipation from junction to case
managing junction temperatures within specified limits is crucial to maintain reliable operation and extend component lifespan.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.