Semikron Danfoss SKM100GB12T4 Dual Half Bridge IGBT Module, 160 A 1200 V, 7-Pin SEMITRANS2, Panel Mount

Bulk discount available

Subtotal (1 unit)*

£100.31

(exc. VAT)

£120.37

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 121 unit(s) ready to ship
  • Plus 14 unit(s) ready to ship from another location
  • Plus 151 unit(s) shipping from 23 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£100.31
2 - 4£95.30
5 - 9£90.98
10 - 19£80.25
20 +£76.24

*price indicative

RS Stock No.:
687-4958
Mfr. Part No.:
SKM100GB12T4
Brand:
Semikron Danfoss
Find similar products by selecting one or more attributes.
Select all

Brand

Semikron Danfoss

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Configuration

Dual Half Bridge

Package Type

SEMITRANS2

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Dual IGBT Modules


A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology


IGBT Modules, Semikron


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.