Semikron Danfoss SKM150GAL12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount
- RS Stock No.:
- 687-4951
- Mfr. Part No.:
- SKM150GAL12T4
- Brand:
- Semikron Danfoss
Bulk discount available
Subtotal (1 unit)*
£92.76
(exc. VAT)
£111.31
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 233 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £92.76 |
| 10 - 19 | £68.92 |
| 20 + | £65.49 |
*price indicative
- RS Stock No.:
- 687-4951
- Mfr. Part No.:
- SKM150GAL12T4
- Brand:
- Semikron Danfoss
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 232 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS2 | |
| Configuration | Single | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 5 | |
| Transistor Configuration | Single | |
| Dimensions | 94 x 34 x 30.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
Select all | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 232 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS2 | ||
Configuration Single | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 5 | ||
Transistor Configuration Single | ||
Dimensions 94 x 34 x 30.1mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.