Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V Module, Panel Mount
- RS Stock No.:
- 273-7360
- Mfr. Part No.:
- DDB6U75N16W1RBOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 24 units)*
£695.544
(exc. VAT)
£834.648
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 24 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 - 96 | £28.981 | £695.54 |
| 120 + | £26.566 | £637.58 |
*price indicative
- RS Stock No.:
- 273-7360
- Mfr. Part No.:
- DDB6U75N16W1RBOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 69 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 335 W | |
| Package Type | Module | |
| Mounting Type | Panel Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 69 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 335 W | ||
Package Type Module | ||
Mounting Type Panel Mount | ||
The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.
Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current