Infineon BSC16DN25NS3GATMA1 IGBT, 8-Pin PG-TDSON-8, Through Hole
- RS Stock No.:
- 273-5240
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.36
(exc. VAT)
£11.23
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 85 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.872 | £9.36 |
| 50 - 495 | £1.564 | £7.82 |
| 500 - 995 | £1.338 | £6.69 |
| 1000 - 2495 | £1.314 | £6.57 |
| 2500 + | £1.282 | £6.41 |
*price indicative
- RS Stock No.:
- 273-5240
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 62.5 W | |
| Package Type | PG-TDSON-8 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 8 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 62.5 W | ||
Package Type PG-TDSON-8 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 8 | ||
The Infineon MOSFET is a N channel MOSFET with 150 degree Celsius operating temperature. It is an optimized for dc to dc conversion. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Low on resistance
Excellent gate charge
Pb free lead plating
Low on resistance
Excellent gate charge