Infineon FF600R12IE4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis Mount
- RS Stock No.:
- 260-8890P
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Brand:
- Infineon
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Subtotal 2 units (supplied in a tray)*
£877.28
(exc. VAT)
£1,052.74
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
2 + | £438.64 |
*price indicative
- RS Stock No.:
- 260-8890P
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 600 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 2 | |
Maximum Power Dissipation | 3.35 kW | |
Package Type | AG-PRIME2 | |
Configuration | Dual | |
Mounting Type | Chassis Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 600 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 3.35 kW | ||
Package Type AG-PRIME2 | ||
Configuration Dual | ||
Mounting Type Chassis Mount | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
High DC stability
High power density
Standardized housing