Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
- RS Stock No.:
- 260-8887
- Mfr. Part No.:
- FF50R12RT4HOSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 10 units)*
£656.64
(exc. VAT)
£787.97
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 02 September 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
---|---|---|
10 - 40 | £65.664 | £656.64 |
50 + | £64.358 | £643.58 |
*price indicative
- RS Stock No.:
- 260-8887
- Mfr. Part No.:
- FF50R12RT4HOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 50 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 2 | |
Maximum Power Dissipation | 285 W | |
Package Type | AG-34MM | |
Configuration | Dual | |
Mounting Type | Chassis Mount | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation 285 W | ||
Package Type AG-34MM | ||
Configuration Dual | ||
Mounting Type Chassis Mount | ||
The infineon dual IGBT module is 34 mm 1200 V, 50 A fast TRENCHSTOP IGBT4 and emitter controlled 4 diode. VCEsat with positive temperature coefficient, it is flexibility, optimal electrical performance and highest reliability.
Extended operation temperature
Low switching losses
Low VCEsat
Isolated base plate
Standard housing
Low switching losses
Low VCEsat
Isolated base plate
Standard housing