Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- RS Stock No.:
- 259-1525P
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
Subtotal 2 units (supplied in a tube)*
£5.36
(exc. VAT)
£6.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 458 unit(s) ready to ship
- Plus 999,999,540 unit(s) shipping from 03 March 2026
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Units | Per unit |
|---|---|
| 2 + | £2.68 |
*price indicative
- RS Stock No.:
- 259-1525P
- Mfr. Part No.:
- IGP50N60TXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 90 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 333 W | |
| Number of Transistors | 3 | |
| Package Type | PG-TO220-3 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 90 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 333 W | ||
Number of Transistors 3 | ||
Package Type PG-TO220-3 | ||
The Infineon low loss IGBT has easy parallel switching capability due to positive temperature coefficient in Vcesat. It is high ruggedness, temperature stable behaviour. It is very soft, fast recovery anti-parallel emitter controlled diode.
Maximum junction temperature 175°C
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution
Short circuit withstand time 5 micro second
Low EMI
Low gate charge
Very tight parameter distribution