Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

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Subtotal 25 units (supplied on a continuous strip)*

£36.50

(exc. VAT)

£43.75

(inc. VAT)

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Units
Per unit
25 - 45£1.46
50 - 120£1.378
125 - 245£1.28
250 +£1.184

*price indicative

Packaging Options:
RS Stock No.:
258-7725P
Mfr. Part No.:
IKB10N60TATMA1
Brand:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

110 W

Package Type

TO-263-3

Configuration

Single Collector, Single Emitter, Single Gate

The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.

Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg